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IBS is the perfect partner for supporting your Ion Implantation needs, whither its production or R&D IBS has a solution to fit all customer’s needs.
From our two production facilities in France and UK. IBS operates a world class Ion Implantation service. Based on 30 years’ experience of Ion Implantation we offer the complete service to our customers. With a well-established Quality control system and extensive technical expertise devoted solely to Ion Implantation processing
IBS can process production volumes from 2” (50 mm) through 8” (200 mm) diameter substrates as well as custom shapes, thicknesses and materials. Along with standard medium and high current dopant species, IBS
Benefits of Out Sourcing:
|Species||Ar, As, B, BF2, Ge, P, Sb, Si...|
|Energy||5 to 200keV for Single Charge, 200 to 600 keV for double and triple charge|
|Dose||1E10 to 1E17/cm|
|Wafer sizes||Sample and 2" to 8" substrates|
|Species||Be, C, Co, Fe, H, He, Mg, S, Si, Si...|
|Energy||Low Energy||2 to 15KeV|
|High Energy||up to 5MeV|
|150mm and 200mm TAIKO© wafers implant service|